Characterization of power MESFETs on 4H-SiC conductive and semi-insulating wafers

被引：0
|
作者：
Noblanc, O. [1 ]
Arnodo, C. [1 ]
Chartier, E. [1 ]
Brylinski, C. [1 ]
机构：
[1] Thomson-CSF, Orsay, France
来源：
Materials Science Forum | 1998年 / 264-268卷 / pt 2期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：949 / 952
相关论文
共 50 条
  • [31] Effect of generation rate on transient photoconductivity of semi-insulating 4H-SiC
    Marek Suproniuk
    Mariusz Wierzbowski
    Piotr Paziewski
    Scientific Reports, 10
  • [32] Identification of a three-site defect in semi-insulating 4H-SiC
    Garces, N. Y.
    Carlos, W. E.
    Glaser, E. R.
    Fanton, M. A.
    JOURNAL OF ELECTRONIC MATERIALS, 2007, 36 (04) : 268 - 271
  • [33] Photoexcited carrier dynamics in semi-insulating 4H-SiC by Raman spectroscopy
    Gao, Meng-meng
    Fan, Liu-yan
    Gong, Xiao-ye
    You, Jing-lin
    Chen, Zhi-zhan
    JOURNAL OF APPLIED PHYSICS, 2022, 132 (13)
  • [34] Deep levels and compensation in high purity semi-insulating 4H-SiC
    Mitchel, W. C.
    Mitchell, W. D.
    Smith, H. E.
    Carlos, W. E.
    Glaser, E. R.
    SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES, 2006, 911 : 213 - +
  • [35] The effect of annealing on high-resistivity and semi-insulating 4H-SiC
    Smith, SR
    Evwaraye, AO
    Mitchel, WC
    SILICON CARBIDE 2002-MATERIALS, PROCESSING AND DEVICES, 2003, 742 : 277 - 282
  • [36] Identification of a Three-Site Defect in Semi-Insulating 4H-SiC
    N. Y. Garces
    W. E. Carlos
    E. R. Glaser
    M. A. Fanton
    Journal of Electronic Materials, 2007, 36 : 268 - 271
  • [37] Fermi level control and deep levels in semi-insulating 4H-SiC
    Mitchel, WC
    Perrin, R
    Goldstein, J
    Saxler, A
    Roth, M
    Smith, SR
    Solomon, JS
    Evwaraye, AO
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (09) : 5040 - 5044
  • [38] Semi-insulating 4H-SiC lateral bulk acoustic wave resonators
    Jiang, B.
    Opondo, N. P.
    Bhave, S. A.
    APPLIED PHYSICS LETTERS, 2021, 118 (11)
  • [39] Characteristics of semi-insulating 4H-SiC layers by vanadium ion implantation
    Wang, Chao
    Zhang, Yuming
    Zhang, Yimen
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2006, 27 (08): : 1396 - 1400
  • [40] Resistivity mapping of semi-insulating 6H-SiC wafers
    Roth, MD
    Heydemann, VD
    Mitchel, WC
    Yushin, NK
    Sharma, M
    Wang, S
    Balkas, CM
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 135 - 138
12345