Comparison of dopant and oxygen striations at the same point in Czochralski silicon crystals

被引：0
|
作者：
Sumitomo Sitix Corp, Saga, Japan [1 ]
机构：
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 11 A卷 / 1388-1390期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Separated striations in n-type Czochralski silicon solar cells
    Li, Guixiu
    Yuan, Shuai
    Zhou, Shenglang
    Wu, Yihua
    Chen, Hongrong
    Zhang, Huali
    Wang, Chen
    Wang, Lei
    Yu, Xuegong
    Yang, Deren
    APPLIED PHYSICS LETTERS, 2024, 124 (25)
  • [32] VOLUME DISTRIBUTION OF OXYGEN IN SILICON SINGLE-CRYSTALS GROWN BY CZOCHRALSKI METHOD
    IVANENKO, NP
    KIRILLOVA, LG
    LYUBCHENKO, TP
    PELEVIN, OV
    PETROV, GN
    SHPANKO, VI
    INORGANIC MATERIALS, 1991, 27 (11) : 1903 - 1909
  • [33] MACROSCOPIC AXIAL DOPANT DISTRIBUTION IN CZOCHRALSKI SILICON-CRYSTALS GROWN IN A VERTICAL MAGNETIC-FIELD
    HIRATA, H
    INOUE, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (11): : 1399 - 1403
  • [34] Finite difference analysis of radial phosphorus dopant distribution in Czochralski-grown silicon single crystals
    Sugawara, K
    Ozeki, K
    Fujioka, K
    Mamada, Y
    Igai, M
    Hirayama, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (09) : G475 - G480
  • [35] Dependence of grown-in defect behavior on oxygen concentration in Czochralski silicon crystals
    Umeno, S
    Yanase, Y
    Hourai, M
    Sano, M
    Shida, Y
    Tsuya, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (10): : 5725 - 5730
  • [36] THE EFFECTS OF PREHEATINGS ON AXIAL OXYGEN PRECIPITATION UNIFORMITY IN CZOCHRALSKI SILICON-CRYSTALS
    CHIOU, HD
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (06) : 1680 - 1684
  • [37] Finite element analysis of the radial phosphorus dopant distribution in silicon Czochralski-grown single crystals
    Sugawara, K
    Sugimoto, S
    Nagashima, N
    Fujioka, K
    Mamada, Y
    Igai, M
    Hirayama, H
    PROCEEDINGS OF THE SYMPOSIUM ON CRYSTALLINE DEFECTS AND CONTAMINATION: THEIR IMPACT AND CONTROL IN DEVICE MANUFACTURING II, 1997, 97 (22): : 50 - 58
  • [38] OXYGEN-CONTENT OF SINGLE-CRYSTALS OF SILICON GROWN BY THE CZOCHRALSKI METHOD
    SALNIK, ZA
    MAKEEV, KI
    ERMOLAEV, SN
    MILVIDSKII, MG
    INORGANIC MATERIALS, 1984, 20 (02) : 153 - 155
  • [39] Numerical Analysis of Oxygen Control during Growth of Czochralski Silicon Single Crystals
    Jomaa, Moez
    M'Hamdi, Mohammed
    Hu, Yu
    Nielsen, Oyvind
    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, : 3521 - 3525
  • [40] Gap states caused by oxygen precipitates and their hydrogen passivation in Czochralski silicon crystals
    Koizuka, M
    Yamada-Kaneta, H
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1998, 210 (02): : 557 - 561
12345