Comparison of dopant and oxygen striations at the same point in Czochralski silicon crystals

被引:0
|
作者
Sumitomo Sitix Corp, Saga, Japan [1 ]
机构
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Comparison of dopant and oxygen striations at the same point in Czochralski silicon crystals
    Kanda, T
    Kusano, K
    Tomokage, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (11A): : L1388 - L1390
  • [2] OXYGEN STRIATIONS IN CZOCHRALSKI SILICON-CRYSTALS
    DOMENICI, M
    MOLINARI, E
    MATERIALS CHEMISTRY, 1979, 4 (03): : 291 - 300
  • [3] NONLINEAR-ANALYSIS OF COMPLEXITIES IN STRIATIONS OF CZOCHRALSKI SILICON-CRYSTALS
    MIYANO, T
    SHINTANI, A
    APPLIED PHYSICS LETTERS, 1993, 63 (26) : 3574 - 3576
  • [4] A NOVEL-APPROACH TO THE CHARACTERIZATION OF GROWTH STRIATIONS IN CZOCHRALSKI SILICON-CRYSTALS
    SHINTANI, A
    MIYANO, T
    HOURAI, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (07) : 2463 - 2469
  • [5] DOPANT, DEFECTS AND OXYGEN INTERACTION IN MEV IMPLANTED CZOCHRALSKI SILICON
    LAFERLA, A
    GALVAGNO, G
    RAINERI, V
    PRIOLO, F
    CARNERA, A
    GASPAROTTO, A
    RIMINI, E
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2): : 232 - 235
  • [6] OXYGEN IN CZOCHRALSKI SILICON MELTS AND CRYSTALS - A REVIEW
    MOODY, JW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C99 - C100
  • [7] The effect of oxygen partial pressure on marangoni-flow-induced dopant striations in floating-zone silicon crystals
    Sumiji, M
    Azami, T
    Hibiya, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (10): : 6243 - 6247
  • [8] CHARACTERIZATION OF INTERSTITIAL OXYGEN STRIATIONS IN SILICON SINGLE-CRYSTALS
    FUSEGAWA, I
    YAMAGISHI, H
    MORI, T
    TAKAYAMA, H
    IINO, E
    TAKANO, K
    JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) : 293 - 297
  • [9] PROPERTIES OF UNIFORM OXYGEN CZOCHRALSKI SILICON-CRYSTALS
    LIN, W
    PEARCE, CW
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5540 - 5543
  • [10] Hydrogen effects on oxygen precipitation in Czochralski silicon crystals
    Hara, Akito
    Aoki, Masaki
    Fukuda, Tetsuo
    Ohsawa, Akira
    1600, (74):