共 50 条
- [21] Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 75 (2-3): : 166 - 169
- [23] THE GROWTH OF QUANTUM WELL GAAS/GAALAS LASER STRUCTURES JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 193 - 199
- [24] Room temperature photoluminescence characterization of HEMT quantum well structures SEMICONDUCTOR CHARACTERIZATION: PRESENT STATUS AND FUTURE NEEDS, 1996, : 629 - 633
- [25] Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well APOC 2003: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 2004, 5280 : 594 - 599
- [28] Photoluminescence in GaAs-based quantum well structures with surface acoustic waves PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 173 (01): : 269 - 273
- [29] TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE LINEWIDTH IN GAAS/GAASP STRAINED-LAYER QUANTUM-WELL STRUCTURES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04): : 2293 - 2298