InGaAs layers of high quality grown on patterned GaAs substrates with trenches

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作者：
Iida, S. [1 ]
Hayakawa, Y. [1 ]
Koyama, T. [1 ]
Kumagawa, M. [1 ]
机构：
[1] Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan
来源：
Materials Science and Engineering B: Solid-State Materials for Advanced Technology | 1999年 / 66卷 / 01期
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页码：75 / 78
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