GaAs W-band impatt diodes for very low-noise oscillators

被引：0
|
作者：
Eisele, H. [1 ]
机构：
[1] Technische Univ Munchen, Germany
来源：
Electronics Letters | 1990年 / 26卷 / 02期
关键词：
Fabry-Perot Resonator - Flat-Profile Impatt Diodes - Impatt Oscillator - Low-Noise Oscillators - W-Band Impatt Diodes - Waveguide Resonant Cavity;
D O I：
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学科分类号：
摘要：
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页码：109 / 110
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