Formation of super-dislocation/micropipe complexes in 6H-SiC

被引：0
|
作者：
Carnegie Mellon Univ, Pittsburgh, United States [1 ]
机构：
来源：
Materials Science Forum | 1998年 / 264-268卷 / pt 1期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：371 / 374
相关论文
共 50 条
  • [31] Damage formation and recovery in C+-irradiated 6H-SIC
    Jiang, W
    Weber, WJ
    Thevuthasan, S
    McCready, DE
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4): : 562 - 566
  • [32] Junction formation via direct bonding of Si and 6H-SiC
    Sasada, Y.
    Kurumi, T.
    Shimizu, H.
    Kinoshita, H.
    Yoshimoto, M.
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 714 - 717
  • [33] Formation of Graphene Ribbons onto Atomically Flat 6H-SiC
    Rius, Gemma
    Mestres, Narcis
    Tanaka, Yayoi
    Miyazaki, Hidetoshi
    Eryu, Osamu
    Godignon, Philippe
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 1158 - +
  • [34] SCANDIUM ACCEPTOR IN 6H-SIC
    BALLANDOVICH, VS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (02): : 174 - 178
  • [35] Ion implantation in 6H-SiC
    Rao, MV
    Nordstrom, D
    Gardner, JA
    Edwards, A
    Roth, EG
    Kelner, G
    Ridgway, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 655 - 659
  • [36] Anisotropic oxidation of 6H-SIC
    Christiansen, K
    Helbig, R
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (06) : 3276 - 3281
  • [37] Surface analysis of 6H-SiC
    vanElsbergen, V
    Kampen, TU
    Monch, W
    SURFACE SCIENCE, 1996, 365 (02) : 443 - 452
  • [38] Deformation of monocrystalline 6H-SiC
    Samant, AV
    Zhou, WL
    Pirouz, P
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 627 - 630
  • [39] Compensation implants in 6H-SiC
    Edwards, A
    Dwight, DN
    Rao, MV
    Ridgway, MC
    Kelner, G
    Papanicolaou, N
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) : 4223 - 4227
  • [40] Local oxidation of 6H-SiC
    Ueno, Katsunori
    Seki, Yasukazu
    1600, JJAP, Minato-ku, Japan (33):
12345