Vacancy hardening in single-crystal TiNx(001) layers

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作者：
机构：
[1] Shin, C.-S.
[2] Gall, D.
[3] Hellgren, N.
[4] 1,Patscheider, J.
[5] Petrov, I.
[6] Greene, J.E.
来源：
Shin, C.-S. (galld@rpi.edu) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
Activation energy - Dislocations (crystals) - Electron energy levels - Magnetron sputtering - Negative ions - Stoichiometry - Titanium compounds - Transmission electron microscopy - X ray diffraction analysis;
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摘要：
The phenomena of vacancy hardening in single crystal TiNx(001) layers was investigated. The linear increase in the relaxed parameter with respect x shows that deviations from stoichiometry were entirely due to anion vacancies. The vacancy hardening can be attributed to a reduced dislocation mobility arising from an increase in the rate limiting activation energy for cation migration.
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