MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate

被引：0
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作者：
Cordier, Y. [1 ]
Bollaert, S. [1 ]
diPersio, J. [1 ]
Ferre, D. [1 ]
Trudel, S. [1 ]
Druelle, Y. [1 ]
Cappy, A. [1 ]
机构：
[1] Universite de Lille 1, Villeneuve d'Ascq, France
来源：
Applied Surface Science | 1998年 / 123-124卷
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19
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页码：734 / 737
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