INVESTIGATION OF RADIATION DEFECTS IN SILICON BOMBARDED WITH 20 Mev PROTONS.

An investigation was made of the influence of irradiation with 20 Mev protons on the properties of n-type silicon with an initial resistivity from 0. 3 to 20 OMEGA multiplied by (times) cm. The parameters of the newly formed radiation defects were determined by the thermal stimulated capacitance and photocapacitance methods using previously prepared p** plus -n diode structures. The temperature dependence of the rate of thermal ionization of electrons and the photocapacitance spectrum indicated that irradiation of n-type silicon with a proton dose of approximately 10**1**4 cm** minus **2 produced mainly four levels with ionization energies. The origins of these levels are discussed.