New method of measurement of photoelectric parameters of wafers with p-n junctions

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Elektrokhimiya | / 61卷 / 73-78期

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[31] Implanted p-n junctions in GaN
Dept. of Mat. Sci. and Engineering, University of Florida, Gainesville, FL 32611, United States
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Solid-State Electron., 7 (1235-1238):
[32] ON THE DELINEATION OF P-N JUNCTIONS IN SILICON
ILES, PA
COPPEN, PJ
JOURNAL OF APPLIED PHYSICS, 1958, 29 (10) : 1514 - 1514
[33] p-n junctions in molybdenum ditelluride
Bernede, JC
Kettaf, M
Khelil, A
Spiesser, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1996, 157 (01): : 205 - 209
[34] ANOMOLOUS RECOMBINATIONS IN P-N JUNCTIONS
BRIENT, SJ
WILSON, CL
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 379 - &
[35] MULTIPLICATION IN SILICON P-N JUNCTIONS
MOLL, JL
PHYSICAL REVIEW, 1965, 137 (3A): : A938 - &
[36] CATHODOLUMINESCENCE AT P-N JUNCTIONS IN GAAS
WITTRY, DB
KYSER, DF
JOURNAL OF APPLIED PHYSICS, 1965, 36 (04) : 1387 - &
[37] PHOTOVOLTAIC EFFECT IN P-N JUNCTIONS
CUMMEROW, RL
PHYSICAL REVIEW, 1954, 95 (01): : 16 - 21
[38] CURRENT CARRIERS IN P-N JUNCTIONS
GRUBNIKOV, ZS
SOVIET PHYSICS-SOLID STATE, 1961, 3 (06): : 1211 - 1219
[39] BISTABLE NOISE IN P-N JUNCTIONS
HSU, ST
SOLID-STATE ELECTRONICS, 1971, 14 (06) : 487 - +
[40] POPULATION INVERSION IN P-N JUNCTIONS
NORDMAN, JE
PROCEEDINGS OF THE IEEE, 1964, 52 (06) : 724 - &