Fabrication of SiO2/Si/SiO2 double barrier diodes using two-dimensional Si structures

被引：0
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作者：
Namatsu, Hideo [1 ]
Horiguchi, Seiji [1 ]
Takahashi, Yasuo [1 ]
Nagase, Masao [1 ]
Kurihara, Kenji [1 ]
机构：
[1] NTT Basic Research Lab, Kanagawa, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 6 A期
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页码：3669 / 3674
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