Sn INCORPORATION IN GaAs BY MOLECULAR BEAM EPITAXY.

被引：0
|
作者：
Ito, Hiroshi [1 ]
Ishibashi, Tadao [1 ]
机构：
[1] NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1987年 / 26卷 / 11期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1760 / 1762
相关论文
共 50 条
  • [21] Effect of Uncontrollable Impurities on the Electric Properties of GaAs Films Grown by Molecular-Beam Epitaxy.
    Dvoryankina, G.G.
    Dvoryankin, V.F.
    Varaksin, G.A.
    Petrov, A.G.
    Kudryashov, A.A.
    Shemet, V.V.
    Yassen, M.L.
    Neorganiceskie materialy, 1986, 22 (03): : 371 - 375
  • [22] UNINTENTIONAL INDIUM INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    MYERS, DR
    DAWSON, LR
    KLEM, JF
    BRENNAN, TM
    HAMMONS, BE
    SIMONS, DS
    COMAS, J
    PELLEGRINO, J
    APPLIED PHYSICS LETTERS, 1990, 57 (22) : 2321 - 2323
  • [23] PHOTOCHEMICAL DEPOSITION OF SN FOR USE IN MOLECULAR-BEAM EPITAXY OF GAAS
    KOWALCZYK, SP
    MILLER, DL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1534 - 1538
  • [24] GROWTH OF SINGLE DOMAIN GaAs FILMS ON DOUBLE DOMAIN Si(001) SUBSTRATES BY MOLECULAR BEAM EPITAXY.
    Kawanami, Hitoshi
    Hatayama, Akiteru
    Nagai, Kiyoko
    Hayashi, Yutaka
    Japanese Journal of Applied Physics, Part 2: Letters, 1987, 26 (03): : 173 - 175
  • [25] GROWTH OF SINGLE DOMAIN GaAs ON 2-INCH Si(100) SUBSTRATE BY MOLECULAR BEAM EPITAXY.
    Nishi, Seiji
    Inomata, Hiroki
    Akiyama, Masahiro
    Kaminishi, Katsuzo
    Japanese Journal of Applied Physics, Part 2: Letters, 1985, 24 (06): : 391 - 393
  • [26] As4 incorporation kinetics in GaAs (001) molecular-beam epitaxy
    Galitsyn, YG
    Marakhovka, II
    Moshchenko, SP
    Mansurov, VG
    TECHNICAL PHYSICS LETTERS, 1998, 24 (04) : 260 - 262
  • [27] GE INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY - A THERMODYNAMIC STUDY
    MUNOZYAGUE, A
    BACEIREDO, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2108 - 2113
  • [28] PHOSPHORUS ACCEPTOR LEVELS IN ZnSe GROWN BY MOLECULAR BEAM EPITAXY.
    Yao, Takafumi
    Okada, Yasumasa
    1600, (25):
  • [29] As4 incorporation kinetics in GaAs (001) molecular-beam epitaxy
    Yu. G. Galitsyn
    I. I. Marakhovka
    S. P. Moshchenko
    V. G. Mansurov
    Technical Physics Letters, 1998, 24 : 260 - 262
  • [30] INFLUENCE OF GROWTH TEMPERATURE ON BE INCORPORATION IN MOLECULAR-BEAM EPITAXY GAAS EPILAYERS
    DUHAMEL, N
    HENOC, P
    ALEXANDRE, F
    RAO, EVK
    APPLIED PHYSICS LETTERS, 1981, 39 (01) : 49 - 51
12345