Sn INCORPORATION IN GaAs BY MOLECULAR BEAM EPITAXY.

被引：0
|
作者：
Ito, Hiroshi [1 ]
Ishibashi, Tadao [1 ]
机构：
[1] NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1987年 / 26卷 / 11期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1760 / 1762
相关论文
共 50 条
  • [1] Sn-DOPED GaAs FILMS GROWN BY MOLECULAR BEAM EPITAXY.
    Fujii, Toshio
    Suzuki, Hidetake
    Hiyamizu, Satoshi
    Fujitsu Scientific and Technical Journal, 1979, 15 (04): : 121 - 130
  • [2] SN INCORPORATION IN GAAS BY MOLECULAR-BEAM EPITAXY
    ITO, H
    ISHIBASHI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (11): : L1760 - L1762
  • [3] INCORPORATION OF SN ON GAAS (111)A SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    HU, SJ
    FAHY, MR
    SATO, K
    JOYCE, BA
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (08) : 1003 - 1006
  • [4] Erbium Doping of GaAs During Molecular Beam Epitaxy.
    Charasse, M.N.
    Galtier, P.
    Lemaire, F.
    Hirtz, J.P.
    Huber, A.M.
    Grattepain, C.
    Lagorsse, O.
    Chazelas, J.
    Vodjani, N.
    Weisbuch, C.
    Le Vide, les couches minces, 1988, 43 (241): : 185 - 186
  • [5] MOLECULAR BEAM EPITAXY.
    Foxon, C.Thomas
    1978, 21 (02): : 139 - 150
  • [6] HEAVY DOPING OF GaAs AND AlGaAs WITH SILICON BY MOLECULAR BEAM EPITAXY.
    Heiblum, M.
    Wang, W.I.
    Osterling, L.E.
    Deline, V.
    1600, (54):
  • [7] EFFECT OF THERMAL ETCHING ON GaAs SUBSTRATE IN MOLECULAR BEAM EPITAXY.
    Saito, Junji
    Ishikawa, Tomonori
    Nakamura, Tomohiro
    Nanbu, Kazuo
    Kondo, Kazuo
    Shibatomi, Akihiro
    1600, (25):
  • [8] SELECTIVE EPITAXIAL GROWTH OF InAs ON GaAs BY MOLECULAR BEAM EPITAXY.
    NEC Corp, Kawasaki, Jpn, NEC Corp, Kawasaki, Jpn
    Japanese Journal of Applied Physics, Part 2: Letters, 1987, 26 (07):
  • [9] GALLIUM AND HYDROGEN ION IRRADIATION DURING GaAs MOLECULAR BEAM EPITAXY.
    Kondo, Naoto
    Kawashima, Minoru
    Sugiura, Hideo
    Japanese Journal of Applied Physics, Part 2: Letters, 1985, 24 (05): : 370 - 372
  • [10] TRANSMISSION ELECTRON MICROSCOPY STUDY OF DEFECTS IN Sn-DOPED GaAs FILMS GROWN BY MOLECULAR BEAM EPITAXY.
    Chen, S.H.
    Carter, C.B.
    Enquist, P.
    Applied physics. A, Solids and surfaces, 1987, A44 (02): : 143 - 151
12345