EFFECT OF Fe ON OXYGEN AND CARBON PRECIPITATIONS IN SILICON.

被引：0
|
作者：
Zhang, Yixin [1 ]
机构：
[1] Acad Sinica, China, Acad Sinica, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1987年 / 8卷 / 03期
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中图分类号：
学科分类号：
摘要：
The effect of Fe on oxygen and carbon precipitation in silicon is investigated. After Fe is doped, both carbon and oxygen precipitation decrease in CZ silicon single crystals with high content of carbon, while the oxygen precipitation increases in silicon single crystals with low content of carbon.
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页码：300 / 304
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