More than 103 time photoluminescence intensity recovery by silicon interface-control-layer-based surface passivation of near-surface quantum wells

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作者：
Hasegawa, Hideki [1 ]
Kodama, Satoshi [1 ]
Koyanagi, Satoshi [1 ]
Hashizume, Tamotsu [1 ]
机构：
[1] Hokkaido Univ, Sapporo, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1995年 / 34卷 / 4 B期
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    APPLIED SURFACE SCIENCE, 1997, 117 : 710 - 713
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