Excitation power dependent photoluminescence characterization of insulator-semiconductor interfaces on near surface quantum structures passivated by silicon interface control layer technology

被引：0
|
作者：
Hasegawa, Hideki [1 ]
Kodama, Satoshi [1 ]
Ikeya, Kengo [1 ]
Fujikura, Hajime [1 ]
机构：
[1] Hokkaido Univ, Sapporo, Japan
来源：
Applied Surface Science | 1997年 / 117-118卷
关键词：
Computer aided analysis - Passivation - Photoluminescence - Semiconducting silicon - Semiconductor quantum wells - Semiconductor quantum wires - Surface treatment;
D O I：
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学科分类号：
摘要：
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页码：710 / 713
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