ACTIVATED CONDUCTION IN DOPED GERMANIUM COMPENSATED BY IRRADIATION WITH FAST REACTOR NEUTRONS.

THE ELECTRICAL CONDUCTIVITY OF N-TYPE GE WITH AN INITIAL ANTIMONY CONCENTRATION APPROXIMATELY 3 * 10**1**6 CM** - **3 ,IRRADIATED WITH FAST REACTOR NEUTRONS TO ENSURE COMPENSATION IN THE RANGE OF 0. 41 < K < 0. 97, WAS STUDIED IN THE TEMPERATURE RANGE 300 -- 4. 2 D. K. THE ACTIVATED CONDUCTIVITY OF COMPENSATED GE HAD TWO TEMPERATURE RANGES WHERE IT EXHIBITED THE ″EPSILON″ //1 AND //69 //3 CONDUCTION PROCESSES. THE VALUES OF ″EPSILON″ //1 AND ″EPSILON″ //3, AND OF THE PRE-EXPONENTIAL FACTOR ″RHO″ **(**O**) IN THE EXPRESSION FOR THE HOPPING CONDUCTION ALL INCREASED ON INCREASE IN THE DEGREE OFCOMPENSATION. HOWEVER, THE CHANGE IN ″EPSILON″ //3 WAS LESSTHAN IN ″EPSILON″ //1. CALCULATIONS DEMONSTRATED THAT THE DEPENDENCE OF ″EPSILON″ //1 ON THE DEGREE OF COMPENSATION COULD BE EXPLAINED BY THE INFLUENCE OF DISORDERED REGIONS ON THE POSITION OF ″EPSILON″ //1 ON THE DEGREE OF COMPENSATION COULD BE EXPLAINED BY THE INFLUENCE OF DISORDERED REGIONS ON THE POSITION OF THE FERMI LEVEL.