Study on the Photoluminescence Spectrum of Nickel Passivation Treatment of Porous Silicon

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作者：
Zhou, Guoyun
Gao, Weidong
Xu, Guoding
Xue, Qing
Chen, Lanli
Mo, Yujun
机构：
[1] Materials Research Center, Nanyang Inst. of Sci. and Technology, 473004 Nanyang, China
[2] Department of Physics, Henan University, 475001 Kaifeng, China
来源：
Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis | 2001年 / 21卷 / 04期
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摘要：
A new method for electrolysis passivation treatment of porous silicon (PS) in NiCl2 is reported in this paper. The photoluminescence (PL) spectra of PS treated in different time is observed, the spectra show that peak intensity is 2.5 times stronger than that without treatment, peak wavelength is 33 nm blue shift when PS is treated properly. The phenomenon caused is that the results of the SiHx change into SiNix when replaced H by Ni on surface of PS.
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