Ion beam mixing of metal-sapphire interfaces

被引：0
|
作者：
Romana, L. [1 ]
Thevenard, P. [1 ]
Brenier, R. [1 ]
Fuchs, G. [1 ]
Massouras, G. [1 ]
机构：
[1] Univ Claude Bernard Lyon, France
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1988年 / B32卷 / 1-4期
关键词：
Gold and Alloys - Thin Films - Ion Beams - Applications - Metals and Alloys - Thin Films - Mixing - Silver and Alloys - Thin Films;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Thin films of Au, Ag have been evaporated on (0001) surface of sapphire and then the interfaces were irradiated with xenon ions. Ion energy of 1.5 MeV, fluences of 3×1015 to 2.2×1016 ions cm-2 and irradiation temperatures at 77 and 300 K were used. The evolutions of the interfaces were studied by different techniques such as Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM), optical absorption, X-ray diffraction at glancing incidence and electrical resistivity measurements. Blistering is observed for all specimens bombarded with fluences as low as 3×1015 ions cm-2. The RBS analysis seems to show a ballistic mixing at Ag or Au-Al2O3 interfaces but X-ray diffraction at glancing incidence does not reveal any new compound formation at the interfaces. Nevertheless optical absorption shows the formation of silver or gold metallic precipitates embedded into Al2O3.
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页码：96 / 99
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