Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallization

被引：0
|
作者：
机构：
[1] Kohn, A.
[2] Eizenberg, M.
[3] Shacham-Diamand, Y.
来源：
Kohn, A. (mtamit@techunix.technion.ac.il) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
相关论文
共 50 条
  • [41] Robust self-assembled monolayer as diffusion barrier for copper metallization
    Mikami, N
    Hata, N
    Kikkawa, T
    Machida, H
    APPLIED PHYSICS LETTERS, 2003, 83 (25) : 5181 - 5183
  • [42] Amorphous CoTix as a liner/diffusion barrier material for advanced copper metallization
    Hosseini, Maryamsadat
    Koike, Junichi
    JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 721 : 134 - 142
  • [43] Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier
    Chen, CY
    Chang, EY
    Chang, L
    Chen, SH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (06) : 1033 - 1036
  • [44] Thermal stability of sputtered tungsten carbide as diffusion barrier for copper metallization
    Wang, SJ
    Tsai, HY
    Sun, SC
    Shiao, MH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (09) : G500 - G506
  • [45] GRAIN-BOUNDARY DIFFUSION DURING THE CREEP OF COPPER
    ROMASHKIN, YP
    SHESTOPALOV, LM
    SOVIET PHYSICS-SOLID STATE, 1961, 2 (12): : 2691 - 2699
  • [46] LATTICE AND GRAIN-BOUNDARY DIFFUSION OF GOLD IN COPPER
    CHATTERJEE, A
    FABIAN, DJ
    ACTA METALLURGICA, 1969, 17 (09): : 1141 - +
  • [47] Grain boundary diffusion of Si in polycrystalline copper film
    Bodnar, Eszter
    Takats, Viktor
    Fodor, Tamas
    Hakl, Jozsef
    Kaganovskii, Yuri
    Yang, Guang
    Yao, Xiaogang
    Vad, Kalman
    VACUUM, 2022, 203
  • [48] Copper and copper oxide composite films deposited by ALD on tantalum-based diffusion barriers
    Waechtler, Thomas
    Oswald, Steffen
    Pohlers, Andreas
    Schulze, Steffen
    Schulzi, Stefan E.
    Gessner, Thomas
    ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007), 2008, 23 : 23 - 29
  • [49] The role of oxygen in the deposition of copper-calcium thin film as diffusion barrier for copper metallization
    Yu, Zhinong
    Ren, Ruihuang
    Xue, Jianshe
    Yao, Qi
    Li, Zhengliang
    Hui, Guanbao
    Xue, Wei
    APPLIED SURFACE SCIENCE, 2015, 328 : 374 - 379
  • [50] Preparation of NiO Monolayer by Langmuir–Blodgett Technique and Its Characterization as Diffusion Barrier for Copper Metallization
    Sumit Sharma
    Mukesh Kumar
    Sumita Rani
    Dinesh Kumar
    C. C. Tripathi
    Metallurgical and Materials Transactions A, 2015, 46 : 3166 - 3172
12345