POPULATION INVERSION AND FAR IR EMISSION OF HOT HOLES IN Ge IN CROSSED ELECTRIC AND MAGNETIC FIELDS.

被引：0
|
作者：
Chebotarev, A.P.
Murzin, V.N.
Stoklitsky, S.A.
Ivanov, Yu.L.
Vasiliev, Yu.B.
Andronov, A.A.
Chernobrovtseva, M.D.
Gavrilenko, V.I.
Kozlov, V.A.
Krasilnik, Z.F.
Mazov, L.S.
Nefedov
01
Chebotarev, A.P.
Acad of Sciences of the USSR, Lebedev Physical In0-80
机构：
来源：
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics | 1982年 / 117-118卷 / Pt I期
关键词：
LASERS; SEMICONDUCTOR;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The extensive investigations of hot holes population inversion and the possibility of FIR laser action in Ge in crossed electric E and magnetic H fields are given via observation of FIR luminescence and the Monte-Carlo simulation. It is demonstrated that the light-heavy hole intersubband inversion is sustained in doped samples providing the hole amplification coefficient up to ten percent per centimeter.
引用
收藏
页码：229 / 231
相关论文
共 50 条
12345