Low-temperature epitaxial growth of Si/Si1-xGex/Si heterostructure by chemical vapor deposition

被引：0
|
作者：
Murota, Junichi [1 ]
Ono, Shoichi [1 ]
机构：
[1] Tohoku Univ, Sendai, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 4 B期
关键词：
Cross sectional transmission electron microscope - Low temperature epitaxial growth - Ultraclean low pressure chemical vapor deposition;
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学科分类号：
摘要：
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页码：2290 / 2299
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