Atomic layer epitaxy

被引:0
|
作者
Niinisto, Lauri [1 ]
机构
[1] Lab. of Inorg. and Analyt. Chemistry, Helsinki Univ. Technolgoy, FIN-02015, Espoo, Finland
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:147 / 152
相关论文
共 50 条
  • [31] MECHANISMS OF ATOMIC LAYER EPITAXY OF GAAS
    YU, ML
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (02) : 716 - 725
  • [32] Morphology in electrochemical atomic layer epitaxy
    Varazo, K
    Wade, TL
    Flowers, BH
    Lay, MD
    Happek, U
    Stickney, JL
    THIN FILMS: PREPARATION, CHARACTERIZATION, APPLICATIONS, 2002, : 83 - 93
  • [33] Mechanism of atomic layer epitaxy of AlAs
    Hirose, S
    Yamaura, M
    Yoshida, A
    Ibuka, H
    Hara, K
    Munekata, H
    JOURNAL OF CRYSTAL GROWTH, 1998, 194 (01) : 16 - 24
  • [34] DEVELOPMENT CHALLENGES OF ATOMIC LAYER EPITAXY
    TUOMO, S
    ACTA POLYTECHNICA SCANDINAVICA-CHEMICAL TECHNOLOGY SERIES, 1990, (195): : 93 - 106
  • [35] USE OF TERTIARYBUTYLARSINE IN ATOMIC LAYER EPITAXY AND LASER-ASSISTED ATOMIC LAYER EPITAXY OF DEVICE QUALITY GAAS
    CHEN, Q
    BEYLER, CA
    DAPKUS, PD
    ALWAN, JJ
    COLEMAN, JJ
    APPLIED PHYSICS LETTERS, 1992, 60 (19) : 2418 - 2420
  • [36] ATOMIC LAYER-BY-LAYER EPITAXY OF CUPRATE SUPERCONDUCTORS
    BOZOVIC, I
    ECKSTEIN, JN
    VIRSHUP, GF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1170 - 1173
  • [37] Enhancement of ZnO nucleation in ZnO epitaxy by atomic layer epitaxy
    Lim, J
    Shin, K
    Kim, H
    Lee, C
    THIN SOLID FILMS, 2005, 475 (1-2) : 256 - 261
  • [38] NBCL(S) AS A PRECURSOR IN ATOMIC LAYER EPITAXY
    ELERS, KE
    RITALA, M
    LESKELA, M
    RAUHALA, E
    APPLIED SURFACE SCIENCE, 1994, 82-3 : 468 - 474
  • [39] ATOMIC LAYER EPITAXY - 12 YEARS LATER
    HERMAN, MA
    VACUUM, 1991, 42 (1-2) : 61 - 66
  • [40] Trisneopentylgallium as a precursor for atomic layer epitaxy of GaAs
    P. Yeo
    R. Arès
    S. P. Watkins
    G. A. Horley
    P. O’Brien
    A. C. Jones
    Journal of Electronic Materials, 1997, 26 : 1174 - 1177