Process integration, architecture and simulation of a GHz-BiCMOS ULSI technology

被引：0
|
作者：
Dwivedi, V.K. [1 ]
Singh, N.B. [1 ]
Pyne, D. [1 ]
Johri, S. [1 ]
Virdi, G.S. [1 ]
机构：
[1] Central Electronics Engineering, Research Inst, Pilani, India
来源：
Microelectronics Journal | 1993年 / 24卷 / 07期
关键词：
Application specific integrated circuits (ASICs) - Device simulator SEDAN - Inhouse device simulator MOSKIT - Process simulator SUPREM;
D O I：
10.1016/0026-2692(93)90022-7
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：773 / 785
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