Effect of hydrogen on the indium incorporation in InGaN epitaxial films

被引:0
|
作者
机构
来源
Appl Phys Lett | / 4卷 / 461期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Indium incorporation and droplet formation during InGaN molecular beam epitaxy
    Bord, OV
    Talalaev, RA
    Karpov, SY
    Makarov, YN
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 297 - 300
  • [32] Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers
    Monavarian, Morteza
    Hafiz, Shopan
    Das, Saikat
    Izyumskaya, Natalia
    Ozgur, Umit
    Morkoc, Hadis
    Avrutin, Vitaliy
    GALLIUM NITRIDE MATERIALS AND DEVICES XI, 2016, 9748
  • [33] Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
    Zhao, Yuji
    Yan, Qimin
    Huang, Chia-Yen
    Huang, Shih-Chieh
    Hsu, Po Shan
    Tanaka, Shinichi
    Pan, Chih-Chien
    Kawaguchi, Yoshinobu
    Fujito, Kenji
    Van de Walle, Chris G.
    Speck, James S.
    DenBaars, Steven P.
    Nakamura, Shuji
    Feezell, Daniel
    APPLIED PHYSICS LETTERS, 2012, 100 (20)
  • [34] Effects of alloy potential fluctuations in InGaN epitaxial films
    Lin, TY
    Fan, JC
    Chen, YF
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (05) : 406 - 411
  • [35] InGaN islands and thin films grown on epitaxial graphene
    Paillet, C.
    Vezian, S.
    Matei, C.
    Michon, A.
    Damilano, B.
    Dussaigne, A.
    Hyot, B.
    NANOTECHNOLOGY, 2020, 31 (40)
  • [36] Effects of alloy potential fluctuations in InGaN epitaxial films
    Department of Physics, National Taiwan University, Taipei, Taiwan
    Semicond Sci Technol, 5 (406-411):
  • [37] Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy
    Browne, David A.
    Young, Erin C.
    Lang, Jordan R.
    Hurni, Christophe A.
    Speck, James S.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2012, 30 (04):
  • [38] EFFECT OF INDIUM ON THE ELECTRICAL TRANSPORT-PROPERTIES OF EPITAXIAL THIN SNTE FILMS
    DAWAR, AL
    MOHAMMAD, AO
    KUMAR, P
    TANEJA, OP
    MATHUR, PC
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (01): : K83 - K87
  • [39] Effect of growth temperature on the structural and optoelectronic properties of epitaxial indium oxide films
    Du, Xuejian
    Man, Baoyuan
    JOURNAL OF CRYSTAL GROWTH, 2018, 499 : 18 - 23
  • [40] Effect of indium incorporation on properties of SnS thin films prepared by spray pyrolysis
    Kumar, K. Santhosh
    Manoharan, C.
    Dhanapandian, S.
    Manohari, A. Gowri
    Mahalingam, T.
    OPTIK, 2014, 125 (15): : 3996 - 4000