Strong enhancement of the photoluminescence efficiency from InAs quantum dots

被引：0
|
作者：
机构：
[1] Zhao, Q.X.
[2] Willander, M.
[3] Wang, S.M.
[4] Wei, Y.Q.
[5] Sadeghi, M.
[6] Yang, J.H.
来源：
Zhao, Q.X. (zhao@fy.chalmers.se) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
Photoluminescence - Semiconducting gallium arsenide - Semiconducting indium compounds - Spectroscopic analysis - Wetting;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
InAs quantum dots (QDs) were investigated using optical spectroscopy to analyze the strong enhancement of their photoluminescence efficiency. The intensity of the InAs QD emission increased by more than an order of magnitude at the excitation density of 60 W/cm2 after the introduction of a tunneling barrier between the InAs layer and the GaAs cap layer. The enhancement of the optical recombination efficiency was found to be due to the suppression of the nonradiative transitions in the wetting layer.
引用
收藏
相关论文
共 50 条
  • [31] Photoluminescence enhancement from colloidal quantum dots in a flexible microcavity
    Luberto, Matthew
    Valappil, Nikesh
    Chatterjee, Subhasish
    Menon, Vinod M.
    2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9, 2008, : 1168 - +
  • [32] Photoluminescence peak wavelength behavior and luminescent efficiency of InAs/InGaAsP/InP quantum dots structure
    Sato, Rie
    Fukuda, Ayako
    Suzuki, Tomomi
    Imai, Hajime
    2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2013, : 40 - 43
  • [33] Long-wavelength infrared photoluminescence from InGaSb/InAs quantum dots
    Gustafsson, O.
    Karim, A.
    Wang, Q.
    Berggren, J.
    Asplund, C.
    Andersson, J. Y.
    Hammar, M.
    INFRARED PHYSICS & TECHNOLOGY, 2013, 59 : 89 - 92
  • [34] Temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots
    SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China
    Chin. Phys. Lett., 2008, 9 (3440-3443):
  • [35] Explanation of Unusual Photoluminescence Behavior from InAs Quantum Dots with InAlAs Capping
    Zhongyuan YU and Yongqiang WEI School of Science
    Journal of Materials Science & Technology, 2005, (04) : 559 - 562
  • [36] Temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots
    Dou Xiu-Ming
    Sun Bao-Quan
    Xiong Yong-Hua
    Huang She-Song
    Ni Hai-Qiao
    Niu Zhi-Chuan
    CHINESE PHYSICS LETTERS, 2008, 25 (09) : 3440 - 3443
  • [37] Polarization Symmetry of Vertical Photoluminescence from Columnar InAs/GaAs Quantum Dots
    Mukai, Kohki
    Watanabe, Keita
    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2009, 7 : 537 - 540
  • [38] Explanation of unusual photoluminescence behavior from InAs quantum dots with InAlAs capping
    Yu, ZY
    Wei, YQ
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2005, 21 (04) : 559 - 562
  • [39] Strong photoluminescence and laser operation of InAs quantum dots covered by a GaAsSb strain-reducing layer
    Akahane, K
    Yamamoto, N
    Gozu, S
    Ohtani, N
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 26 (1-4): : 395 - 399
  • [40] Photoluminescence enhancement of quantum dots on Ag nanoneedles
    Syed Rahin Ahmed
    Hee Ryoung Cha
    Jung Youn Park
    Enoch Y Park
    Dongyun Lee
    Jaebeom Lee
    Nanoscale Research Letters, 7
12345