Strong enhancement of the photoluminescence efficiency from InAs quantum dots

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作者：
机构：
[1] Zhao, Q.X.
[2] Willander, M.
[3] Wang, S.M.
[4] Wei, Y.Q.
[5] Sadeghi, M.
[6] Yang, J.H.
来源：
Zhao, Q.X. (zhao@fy.chalmers.se) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
Photoluminescence - Semiconducting gallium arsenide - Semiconducting indium compounds - Spectroscopic analysis - Wetting;
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摘要：
InAs quantum dots (QDs) were investigated using optical spectroscopy to analyze the strong enhancement of their photoluminescence efficiency. The intensity of the InAs QD emission increased by more than an order of magnitude at the excitation density of 60 W/cm2 after the introduction of a tunneling barrier between the InAs layer and the GaAs cap layer. The enhancement of the optical recombination efficiency was found to be due to the suppression of the nonradiative transitions in the wetting layer.
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