Contact resistivity dependence on Ge:Ni ratio in AuNiAuGe metallization on n-GaAs

被引：0

作者：

Chua, Soo-Jin ^{[1
]}

Lee, Seng Hin ^{[1
]}

机构：

[1] national Univ of Singapore, Kent Ridge, Singapore

来源：

| 1600年 / Publ by JJAP, Minato-ku, Japan卷 / 33期

关键词：

15;

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暂无

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引用

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[31] ORIENTATIONAL DEPENDENCE OF PHOTOELECTROCHEMICAL ETCHING IN N-GAAS
CARRABBA, MM
NGUYEN, NM
RAUH, RD
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C332 - C332
[32] AN IMPROVED AUGE OHMIC CONTACT TO N-GAAS
NATHAN, MI
HEIBLUM, M
SOLID-STATE ELECTRONICS, 1982, 25 (10) : 1063 - 1065
[33] Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates
Hudait, MK
Krupanidhi, SB
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 87 (02): : 141 - 147
[34] ORIENTATIONAL DEPENDENCE OF PHOTOELECTROCHEMICAL ETCHING IN N-GAAS
CARRABBA, MM
NGUYEN, NM
RAUH, RD
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (01) : 260 - 261
[35] AUGER-ELECTRON SPECTROSCOPY AND SPUTTER ETCHING OF NI-AU-GE ON N-GAAS
ROBINSON, GY
JARVIS, NL
APPLIED PHYSICS LETTERS, 1972, 21 (10) : 507 - &
[36] The behaviour of Sn/Pd/n-GaAs metallization under thermal treatment
Machác, P
EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2001, : 101 - 106
[37] OSCILLATION AND PHOTORESPONSE OF HIGH-RESISTIVITY N-GAAS DIODES
TORRENS, AB
YOUNG, L
CANADIAN JOURNAL OF PHYSICS, 1972, 50 (11) : 1098 - &
[38] THE TEMPERATURE-DEPENDENCE OF THE CONTACT RESISTIVITY OF THE SI/NI(MG) NONSPIKING CONTACT SCHEME ON P-GAAS
HAN, CC
WANG, XZ
LAU, SS
POTEMSKI, RM
TISCHLER, MA
KUECH, TF
JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) : 3124 - 3129
[39] SPECIFIC RESISTIVITY OF DELTA-DOPED CONTACTS IN N-GAAS
MARCY, DL
MABY, EW
NEWMAN, PG
KHANNA, R
JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) : 514 - 516
[40] A comparative study of Pd/Sn/Au, Au/Ge/Au/Ni/Au, Au-Ge/Ni and Ni/Au-Ge/Ni ohmic contacts to n-GaAs
Islam, MS
McNally, PJ
MICROELECTRONIC ENGINEERING, 1998, 40 (01) : 35 - 42

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