Contact resistivity dependence on Ge:Ni ratio in AuNiAuGe metallization on n-GaAs

被引：0
|
作者：
Chua, Soo-Jin [1 ]
Lee, Seng Hin [1 ]
机构：
[1] national Univ of Singapore, Kent Ridge, Singapore
来源：
| 1600年 / Publ by JJAP, Minato-ku, Japan卷 / 33期
关键词：
15;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] CONTACT RESISTIVITY DEPENDENCE ON GE-NI RATIO IN AUNIAUGE METALLIZATION ON N-GAAS
    CHUA, SJ
    LEE, SH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 66 - 69
  • [2] THE TEMPERATURE-DEPENDENCE OF CONTACT RESISTIVITY OF THE GE PD AND THE SI PD NONALLOYED CONTACT SCHEME ON N-GAAS
    YU, LS
    WANG, LC
    MARSHALL, ED
    LAU, SS
    KUECH, TF
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) : 1621 - 1625
  • [3] THE IMPORTANCE OF THE NI TO GE RATIO AND OF THE ANNEALING CYCLE FOR THE RESISTIVITY AND MORPHOLOGY OF NIAUGE OHMIC CONTACTS TO N-GAAS
    PROCOP, M
    SANDOW, B
    RAIDT, H
    SON, LD
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 104 (02): : 903 - 916
  • [4] Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs
    Mitin, D. M.
    Soldatenkov, F. Yu.
    Mozharov, A. M.
    Vasil'ev, A. A.
    Neplokh, V. V.
    Mukhin, I. S.
    NANOSYSTEMS-PHYSICS CHEMISTRY MATHEMATICS, 2018, 9 (06): : 789 - 792
  • [5] METALLURGY OF AL-NI-GE OHMIC CONTACT FORMATION ON N-GAAS
    LIN, XW
    LAMPERT, WV
    HAAS, TW
    HOLLOWAY, PH
    LILIENTALWEBER, Z
    SWIDER, W
    WASHBURN, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (05): : 2081 - 2091
  • [6] Solid phase epitaxial regrowth of n-GaAs with Ti-Ge-Ni metallization for ohmic contacts
    Kim, TJ
    Krishnamoothy, V
    Puga-Lambers, M
    Holloway, PH
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) : 208 - 212
  • [7] DESIGN AND CHARACTERIZATION OF A THERMALLY STABLE OHMIC CONTACT METALLIZATION ON N-GAAS
    GUPTA, RP
    KHOKLE, WS
    WUERFL, J
    HARTNAGEL, HL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (02) : 631 - 635
  • [8] CONTACT RESISTIVITY OF IR LAMP ALLOYED AU-GE METALLIZATION ON GAAS
    GILL, SS
    DAWSEY, JR
    CULLIS, AG
    ELECTRONICS LETTERS, 1984, 20 (22) : 944 - 945
  • [9] ELECTRICAL AND INTERFACIAL CHARACTERISTICS OF NIAS/N-GAAS, NIAS/GE/N-GAAS AND GE/NIAS/N-GAAS STRUCTURES
    RAI, RS
    MAHAJAN, S
    HARBISON, JP
    SANDS, T
    GENUT, M
    CHEEKS, TL
    KERAMIDAS, VG
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 269 - 274
  • [10] MORPHOLOGY OF AL-NI-GE OHMIC CONTACTS TO N-GAAS AS A FUNCTION OF CONTACT COMPOSITION
    LIN, XW
    LAMPERT, WV
    SWIDER, W
    HAAS, TW
    HOLLOWAY, PH
    WASHBURN, J
    LILIENTALWEBER, Z
    THIN SOLID FILMS, 1994, 253 (1-2) : 490 - 495
12345