Monolithically integrated AlGaAs/InGaAs laser diode, p-n photodetector and GaAs MESFET grown on Si substrate

被引：0
|
作者：
机构：
[1] Egawa, Takashi
[2] Jimbo, Takashi
[3] Umeno, Masayoshi
来源：
Egawa, Takashi | 1600年 / 32期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate
    Liu, Huiyun
    Wang, Ting
    Jiang, Qi
    Hogg, Richard
    Tutu, Frank
    Pozzi, Francesca
    Seeds, Alwyn
    NATURE PHOTONICS, 2011, 5 (07) : 416 - 419
  • [22] Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate
    Liu H.
    Wang T.
    Jiang Q.
    Hogg R.
    Tutu F.
    Pozzi F.
    Seeds A.
    Nature Photonics, 2011, 5 (7) : 416 - 419
  • [23] Photoelectrical properties of GaAs/AlGaAs p-n heterojunctions under infrared laser illumination
    Asmontas, S
    Gradauskas, J
    Seliuta, D
    Suziedelis, A
    Silenas, A
    Valusis, G
    PHYSICA SCRIPTA, 1999, T79 : 170 - 173
  • [24] Photoelectrical properties of GaAs/AlGaAs p-n heterojunctions under infrared laser illumination
    Asmontas, S.
    Gradauskas, J.
    Seliuta, D.
    Suziedelis, A.
    Silenas, A.
    Valusis, G.
    Physica Scripta T, 1999, 79 : 170 - 173
  • [25] InGaAs/GaAs nano-ridge laser with an amorphous silicon grating monolithically grown on a 300 mm Si wafer
    Ouyang, Z.
    Colucci, D.
    Fahmy, E. M. B.
    Yimam, A. A.
    Van Campernhout, J.
    Kunert, B.
    Van Thourhout, D.
    OPTICS LETTERS, 2024, 49 (16) : 4741 - 4744
  • [26] Integration of InGaAs MOSFETs and GaAs/AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)
    Kumar, Annie
    Lee, Shuh-Ying
    Yadav, Sachin
    Tan, Kian Hua
    Loke, Wan Khai
    Dong, Yuan
    Lee, Kwang Hong
    Wicaksono, Satrio
    Liang, Gengchiau
    Yoon, Soon-Fatt
    Antoniadis, Dimitri
    Yeo, Yee-Chia
    Gong, Xiao
    OPTICS EXPRESS, 2017, 25 (25): : 31853 - 31862
  • [27] Investigation of Si-doped p-type AlGaAs/GaAs, AlGaAs/InGaAs quantum well infrared photodetectors and multiquantum wells grown on (311)A GaAs
    Chin, A
    Liao, CC
    Chu, J
    Li, SS
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 999 - 1003
  • [28] On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
    V. Ya. Aleshkin
    N. V. Baidus
    A. A. Dubinov
    Z. F. Krasilnik
    S. M. Nekorkin
    A. V. Novikov
    A. V. Rykov
    D. V. Yurasov
    A. N. Yablonskiy
    Semiconductors, 2017, 51 : 663 - 666
  • [29] On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
    Aleshkin, V. Ya.
    Baidus, N. V.
    Dubinov, A. A.
    Krasilnik, Z. F.
    Nekorkin, S. M.
    Novikov, A. V.
    Rykov, A. V.
    Yurasov, D. V.
    Yablonskiy, A. N.
    SEMICONDUCTORS, 2017, 51 (05) : 663 - 666
  • [30] Luminescence study in InGaAs/AlGaAs multi-quantum-well light emitting diode with p-n junction engineering
    Han, Lili
    Zhao, Minglong
    Tang, Xiansheng
    Huo, Wenxue
    Deng, Zhen
    Jiang, Yang
    Wang, Wenxin
    Chen, Hong
    Du, Chunhua
    Jia, Haiqiang
    JOURNAL OF APPLIED PHYSICS, 2020, 127 (08)
12345