Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates

被引：0
|
作者：
Xu, S.J. [1 ]
Chua, S.J. [1 ]
Zhang, Xiong [1 ]
Zhang, Z.H. [1 ]
Luo, C.P. [1 ]
Yuan, Z.L. [1 ]
Xu, Z.Y. [1 ]
Zhou, J.M. [1 ]
机构：
[1] Natl Univ of Singapore, Singapore, Singapore
来源：
IEEE Journal on Selected Topics in Quantum Electronics | 1997年 / 3卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：471 / 474
相关论文
共 50 条
  • [31] Quantum confined Stark shift in (InGa)As self-assembled quantum dots grown on (100) and (311)B GaAs substrates
    Levin, A
    Patanè, A
    Polimeni, A
    Schindler, F
    Eaves, L
    Main, PC
    Henini, M
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1217 - 1218
  • [32] CHARACTERIZATION OF INGAAS/GAAS STRAINED-LAYER QUANTUM-WELLS GROWN ON (311)A GAAS SUBSTRATES
    TAKAHASHI, M
    VACCARO, P
    FUJITA, K
    WATANABE, T
    APPLIED PHYSICS LETTERS, 1995, 66 (01) : 93 - 95
  • [33] Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix
    Chen, YH
    Yang, Z
    Wang, ZG
    Xu, B
    Liang, JB
    Qian, JJ
    PHYSICAL REVIEW B, 1997, 56 (11): : 6770 - 6773
  • [34] Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix
    Chen, YH
    Yang, Z
    Wang, ZG
    Xu, B
    Liang, JB
    Qian, JJ
    APPLIED SURFACE SCIENCE, 1998, 123 : 343 - 346
  • [35] Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix
    Chen, Y.H.
    Yang, Z.
    Wang, Z.G.
    Xu, B.
    Liang, J.B.
    Qian, J.J.
    Applied Surface Science, 1998, 123-124 : 343 - 346
  • [36] Comparative optical studies of InGaAs/GaAs quantum wells grown by MBE on (100) and (311)A GaAs planes
    Khatab, A.
    Shafi, M.
    Mari, R. H.
    Aziz, M.
    Henini, M.
    Patriarche, G.
    Troadec, D.
    Sadeghi, M.
    Wang, S.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 7, 2012, 9 (07): : 1621 - 1623
  • [37] Cathodoluminescence study of low-dimensional quantum structures grown on patterned GaAs(311)A substrates
    Jahn, U
    Nötzel, R
    Fricke, J
    Schönherr, HP
    Ploog, KH
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, 1999, (164): : 657 - 660
  • [38] Electronic and optical properties of InAs/InP quantum dots on InP(100) and InP(311)B substrates:: Theory and experiment
    Cornet, C.
    Schliwa, A.
    Even, J.
    Dore, F.
    Celebi, C.
    Letoublon, A.
    Mace, E.
    Paranthoen, C.
    Simon, A.
    Koenraad, P. M.
    Bertru, N.
    Bimberg, D.
    Loualiche, S.
    PHYSICAL REVIEW B, 2006, 74 (03)
  • [39] Novel characteristics of self assembled InAs quantum dots grown on (311)A GaAs
    Sanguinetti, S
    Fortina, SC
    Grilli, E
    Guzzi, M
    Henini, M
    Upward, MD
    Moriarty, P
    Beton, PH
    Eaves, L
    MICROELECTRONIC ENGINEERING, 1998, 43-4 : 45 - 49
  • [40] Self organization in InGaAs/AlGaAs quantum disk structures on GaAs (311)B substrates
    Ogawa, T.
    Akabori, M.
    Motohisa, J.
    Fukui, T.
    Microelectronic Engineering, 1999, 47 (01): : 231 - 233
12345