XTEM sample preparation technique for n-type compound semiconductors using photochemical etching

被引：0
|
作者：
Department of Electronics, Nagoya University, Furo-cho, Chikusa-ku Nagoya 464-01, Japan [1 ]
不详 [2 ]
机构：
来源：
MICROSC. RES. TECH. | / 4卷 / 363-364期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] LASER-INDUCED PHOTOCHEMICAL DRY ETCHING OF III-V COMPOUND SEMICONDUCTORS
    ASHBY, CIH
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 540 : 467 - 471
  • [22] CARRIER-DRIVEN PHOTOCHEMICAL DRY ETCHING OF INDIRECTIII-V COMPOUND SEMICONDUCTORS
    ASHBY, CIH
    BIEFELD, RM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (05) : 1494 - 1496
  • [23] RAMAN INSTABILITY IN N-TYPE PIEZOELECTRIC SEMICONDUCTORS
    SEN, PK
    APTE, N
    GUHA, S
    PHYSICAL REVIEW B, 1980, 22 (12): : 6340 - 6346
  • [24] BRILLOUIN INSTABILITY IN N-TYPE PIEZOELECTRIC SEMICONDUCTORS
    SEN, PK
    SEN, P
    PHYSICAL REVIEW B, 1982, 25 (12): : 7741 - 7753
  • [25] ELECTRON DISTRIBUTION IN IRRADIATED N-TYPE SEMICONDUCTORS
    GLASER, H
    SIEGERT, AJF
    PHYSICAL REVIEW, 1952, 87 (01): : 191 - 191
  • [26] n-Type Organic Semiconductors in Organic Electronics
    Anthony, John E.
    Facchetti, Antonio
    Heeney, Martin
    Marder, Seth R.
    Zhan, Xiaowei
    ADVANCED MATERIALS, 2010, 22 (34) : 3876 - 3892
  • [27] n-Type Polymer Semiconductors Based on Dithienylpyrazinediimide
    Ma, Suxiang
    Wang, Junwei
    Feng, Kui
    Zhang, Hao
    Wu, Ziang
    Wang, Yimei
    Liu, Bin
    Li, Yongchun
    An, Mingwei
    Gonzalez-Nunez, Raul
    Ponce Ortiz, Rocio
    Woo, Han Young
    Guo, Xugang
    ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (01) : 1639 - 1651
  • [28] n-Type acceptor–acceptor polymer semiconductors
    Yongqiang Shi
    Liming Ding
    Journal of Semiconductors, 2021, 42 (10) : 10 - 12
  • [29] MAGNETOOPTICAL ABSORPTION IN N-TYPE ZINCBLENDE SEMICONDUCTORS
    BARTICEVIC, Z
    RODRIGUEZ, S
    SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (06) : 495 - 498
  • [30] TRANSPORT THEORY OF THE ACOUSTOELECTRIC EFFECT IN SEMICONDUCTORS SUCH AS n-TYPE Ge AND n-TYPE Si.
    Lipnik, A.A.
    1972, 5 (10): : 1645 - 1650
12345