Hydrogen-carbon related deep donor in crystalline n-Si:C

被引：0
|
作者：
Endroes, A. [1 ]
Kruehler, W. [1 ]
Grabmaier, J. [1 ]
机构：
[1] Siemens AG, Germany
来源：
Materials science and engineering | 1989年 / B4卷 / 1-4期
关键词：
Carbon--Hydrogenation - Crystals--Spectroscopic Analysis - Hydrogen--Electronic Properties;
D O I：
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中图分类号：
学科分类号：
摘要：
The electronic properties of hydrogen in phosphorus-doped monocrystalline silicon containing different amounts of carbon have been investigated by deep level transient spectroscopy. The experiments reveal that after a reverse bias annealing treatment hydrogen, in the presence of carbon, forms a deep and charge-state-dependent carbon-hydrogen level located approximately 0.16 eV below the conduction band edge. This trap center is stable only in the positively charged state and vanishes after capture of electrons for temperatures greater than or equal to 300 K.
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页码：35 / 39
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