XPS study of the SF6 reactive ion beam etching of silicon at low temperatures

被引：0
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作者：
Tessier, P.Y. [1 ]
Chevolleau, T. [1 ]
Cardinaud, C. [1 ]
Grolleau, B. [1 ]
机构：
[1] Inst. des Matériaux de Nantes, Lab. Plasmas Couches Minces, U., Nantes, France
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1999年 / 155卷 / 03期
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页码：280 / 288
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