Extracting the oxide capacitance using inductance-capacitance-resistance meter measurement on metal-oxide-semiconductor capacitors

被引：0
|
作者：
Lee, W. [1 ]
Shin, J. [1 ]
Yang, H. [1 ]
Hwang, H. [1 ]
机构：
[1] Dept. of Materials Science and Eng., Kwangju Inst. of Science and Tech., 1, Oryong-dong, Buk-gu, Kwangju, 500-712, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 9 A期
关键词：
D O I：
10.1143/jjap.40.5308
中图分类号：
学科分类号：
摘要：
MOS capacitors
引用
收藏
页码：5308 / 5309
相关论文
共 50 条
  • [1] Extracting the oxide capacitance using inductance-capacitance-resistance meter measurement on metal-oxide-semiconductor capacitors
    Lee, W
    Shin, J
    Yang, H
    Hwang, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (9A): : 5308 - 5309
  • [2] Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
    Lind, Erik
    Niquet, Yann-Michel
    Mera, Hector
    Wernersson, Lars-Erik
    APPLIED PHYSICS LETTERS, 2010, 96 (23)
  • [3] DYNAMIC VOLT-CAPACITANCE CHARACTERISTIC MEASUREMENT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES
    SAMOKHVALOV, MK
    NOVICHKOV, VV
    SVERDLOVA, AM
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1977, 20 (02) : 559 - 561
  • [4] Capacitance-voltage measurements of monolayer MoS2 metal-oxide-semiconductor capacitors
    Yang, Hae In
    Choi, Woong
    MICROELECTRONIC ENGINEERING, 2021, 238
  • [5] EXTREMELY LONG CAPACITANCE TRANSIENTS IN 6H-SIC METAL-OXIDE-SEMICONDUCTOR CAPACITORS
    PAN, JN
    COOPER, JA
    MELLOCH, MR
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (01) : 572 - 574
  • [6] METAL-OXIDE-SEMICONDUCTOR CAPACITANCE MEASUREMENTS ON AMORPHOUS-SILICON
    NEITZERT, HC
    LOFFLER, S
    KLAUSMANN, E
    FAHRNER, WR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (09) : 2474 - 2477
  • [7] OBSERVATION OF OSCILLATORY BIAS DEPENDENCE OF METAL-OXIDE-SEMICONDUCTOR CAPACITANCE
    ABE, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (07) : 1087 - 1088
  • [8] Observation of metal-oxide-semiconductor transistor operation using scanning capacitance microscopy
    Nakakura, CY
    Hetherington, DL
    Shaneyfelt, MR
    Shea, PJ
    Erickson, AN
    APPLIED PHYSICS LETTERS, 1999, 75 (15) : 2319 - 2321
  • [9] DYNAMIC VOLT-CAPACITANCE CHARACTERISTIC MEASUREMENT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES.
    Samokhvalov, M.K.
    Novichkov, V.V.
    Sverdlova, A.M.
    Instruments and Experimental Techniques (English Translation of Pribory I Tekhnika Eksperimenta), 1977, 20 (2 pt 2): : 559 - 561
  • [10] Transient capacitance in metal-oxide-semiconductor structures with stacked gate dielectrics
    Goto, M
    Higuchi, K
    Torii, K
    Hasunuma, R
    Yamabe, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (11B): : 7826 - 7830
12345