共 50 条
- [11] Investigation of growth conditions for epitaxial growth of SiC on Si in the solid-source molecular beam epitaxy MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 164 - 167
- [13] Improved epitaxy of cubic SiC thin films on Si(111) by solid-source MBE SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 255 - 258
- [14] Improved epitaxy of cubic SiC thin films on Si(111) by solid-source MBE Materials Science Forum, 1998, 264-268 (pt 1): : 255 - 258
- [16] InGaAs/InP photocathode grown by solid-source MBE INTERNATIONAL SYMPOSIUM ON PHOTOELECTRONIC DETECTION AND IMAGING 2013: LOW-LIGHT-LEVEL TECHNOLOGY AND APPLICATIONS, 2013, 8912
- [18] SiC epitaxial layers grown by sublimation method and their electrical properties SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 153 - +
- [19] TEM study of the morphology of GaN/SiC (0001) grown at various temperatures by MBE MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5 : art. no. - W3.47