Ta2O5 thin films with exceptionally high dielectric constant

被引:0
|
作者
Adv. Process Integration Department, Technology Development Division, Semiconductor Group, C832, 4-1-1, Kamikodanaka, Nakahara-Ku, Kawasaki, 211-88, Japan [1 ]
机构
来源
Appl Phys Lett | / 16卷 / 2370-2372期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Temperature dependence of refractive index of Ta2O5 Dielectric Films
    A. K. Chu
    H. C. Lin
    W. H. Cheng
    Journal of Electronic Materials, 1997, 26 : 889 - 892
  • [42] NiCr bottom electrodes for Ta2O5 high dielectric thin films in metal-insulator-metal capacitors
    Lee, Eung-Min
    Yoon, Soon-Gil
    Integrated Ferroelectrics, 2002, 47 : 41 - 48
  • [43] Temperature dependence of refractive index of Ta2O5 dielectric films
    Chu, AK
    Lin, HC
    Cheng, WH
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (08) : 889 - 892
  • [44] Electrical properties of thin RF sputtered Ta2O5 films after constant current stress
    Pecovska-Gjorgjevich, M
    Novkovski, N
    Atanassova, E
    MICROELECTRONICS RELIABILITY, 2003, 43 (02) : 235 - 241
  • [45] Infrared absorption peak due to Ta=O bonds in Ta2O5 thin films
    Ono, H
    Koyanagi, K
    APPLIED PHYSICS LETTERS, 2000, 77 (10) : 1431 - 1433
  • [46] The Enhanced Dielectric and Insulating Properties of Al2O3 Modified Ta2O5 Thin Films
    Chandra S. Desu
    Pooran C. Joshi
    Seshu B. Desu
    Journal of Electroceramics, 2003, 10 : 209 - 214
  • [47] The enhanced dielectric and insulating properties of Al2O3 modified Ta2O5 thin films
    Desu, CS
    Joshi, PC
    Desu, SB
    JOURNAL OF ELECTROCERAMICS, 2003, 10 (03) : 209 - 214
  • [48] Comparison of the temperature dependence of the mechanical dissipation in thin films of Ta2O5 and Ta2O5 doped with TiO2
    Martin, I. W.
    Chalkley, E.
    Nawrodt, R.
    Armandula, H.
    Bassiri, R.
    Comtet, C.
    Fejer, M. M.
    Gretarsson, A.
    Harry, G.
    Heinert, D.
    Hough, J.
    MacLaren, I.
    Michel, C.
    Montorio, J-L
    Morgado, N.
    Penn, S.
    Reid, S.
    Route, R.
    Rowan, S.
    Schwarz, C.
    Seidel, P.
    Vodel, W.
    Woodcraft, A. L.
    CLASSICAL AND QUANTUM GRAVITY, 2009, 26 (15)
  • [49] In-situ low temperature N2O plasma annealing for high-dielectric Ta2O5 thin films
    Um, MY
    Lee, SK
    Kim, HJ
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S791 - S794
  • [50] Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material
    Liu, J-W
    Liao, M-Y
    Imura, M.
    Watanabe, E.
    Oosato, H.
    Koide, Y.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (24)