InGaAs/GaAs vertical-cavity surface-emitting lasers with AlAs selective oxide layers

被引：0
|
作者：
Hatori, Nobuaki [1 ]
Mukaihara, Toshikazu [1 ]
Ohnoki, Noriyuki [1 ]
Mizutani, Akimasa [1 ]
Abe, Makoto [1 ]
Matsutani, Akihiro [1 ]
Koyama, Fumio [1 ]
Iga, Kenichi [1 ]
机构：
[1] Tokyo Inst of Technology, Yokohama, Japan
来源：
Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) | 1998年 / 81卷 / 01期
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摘要：
13
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页码：13 / 20
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