SPIN-DEPENDENT RECOMBINATION AND CONDUCTIVITY AS MEANS OF EXAMINING DISLOCATIONS IN SEMICONDUCTORS.

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作者：
Kveder, V.V.
Osip'yan, Yu.A.
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来源：
Bulletin of the Academy of Sciences of the U.S.S.R. Physical series | 1986年 / 51卷 / 04期
关键词：
CRYSTALS - Dislocations - ELECTRIC CONDUCTIVITY;
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摘要：
Dislocations in silicon have been examined by spin-dependent recombination methods for photoexcited electrons and holes together with combined spin resonance for electrons trapped in a one-dimensional band corresponding to one of the types of reconstructed dislocation.
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