Acoustoelectric analysis of deep levels at the interface in GaAs epitaxial structure

被引：0
|
作者：
Ostrovskij, I.V. [1 ]
Sajko, S.V. [1 ]
机构：
[1] Kievskij Univ, Kiev, Ukraine
来源：
Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya | 1994年 / 10-11期
关键词：
Electron capture - Energy levels;
D O I：
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学科分类号：
摘要：
引用
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页码：62 / 67
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