2-D carrier profiling of InP-based structures using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)

被引：0
|
作者：
De Wolf, P. [1 ]
Erickson, A. [1 ]
Brazel, E. [1 ]
Lefevre, M. [1 ]
Geva, M. [1 ]
机构：
[1] Digital Instruments, Santa Barbara, United States
来源：
Conference Proceedings - International Conference on Indium Phosphide and Related Materials | 2000年
关键词：
Scanning capacitance microscopy (SCM) - Scanning spreading resistance microscopy (SSRM);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：162 / 165
相关论文
共 50 条
  • [1] 2-D carrier profiling of InP-based structures using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)
    De Wolf, P
    Erickson, A
    Brazel, E
    Lefevre, M
    Geva, M
    2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 162 - 165
  • [2] Two-dimensional carrier profiling of InP-based structures using scanning spreading resistance microscopy.
    De Wolf, P
    Geva, M
    Reynolds, CL
    Hantschel, T
    Vandervorst, W
    Bylsma, RB
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04): : 1285 - 1288
  • [3] Three-dimensional carrier profiling of InP-based devices using scanning spreading resistance microscopy
    Xu, MW
    Hantschel, T
    Vandervorst, W
    APPLIED PHYSICS LETTERS, 2002, 81 (01) : 177 - 179
  • [4] Two-dimensional carrier profiling of InP structures using scanning spreading resistance microscopy
    De Wolf, P
    Geva, M
    Hantschel, T
    Vandervorst, W
    Bylsma, RB
    APPLIED PHYSICS LETTERS, 1998, 73 (15) : 2155 - 2157
  • [5] Two-dimensional carrier profiling of InP structures using scanning spreading resistance microscopy
    IMEC, Leuven, Belgium
    Appl Phys Lett, 15 (2155-2157):
  • [6] Reliable 2-D carrier profiling with SSRM on InP-based devices
    Xu, MW
    Hantschel, T
    Vandervost, W
    2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 541 - 544
  • [7] Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)
    Germanicus, Rosine Coq
    Lallemand, Florent
    Chateigner, Daniel
    Jouha, Wadia
    Moultif, Niemat
    Latry, Olivier
    Fouchet, Arnaud
    Murray, Hugues
    Bunel, Catherine
    Luders, Ulrike
    NANO EXPRESS, 2021, 2 (01):
  • [8] Qualitative doping area characterization of SONOS transistor utilizing scanning capacitance microscopy (SCM) and scanning spread resistance microscopy (SSRM)
    Heo, J
    Kim, D
    Kim, CW
    Chung, I
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 124 : 301 - 304
  • [9] Scanning Spreading Resistance Microscopy for 3D-Carrier Profiling in FinFET-Based Structures
    Mody, Jay
    Eyben, Pierre
    Polspoel, Wouter
    Jurczak, Malgotzata
    Vandervorst, Wilffried
    DOPING ENGINEERING FOR FRONT-END PROCESSING, 2008, 1070 : 49 - +
  • [10] Reliable two-dimensional carrier profiling by scanning spreading resistance microscopy on InP-based devices with fast quantification procedure
    Xu, MW
    Eyben, P
    Hantschel, T
    Vandervorst, W
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (2B): : 1048 - 1054
12345