Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers

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作者：
Grivickas, V. [1 ]
Linnros, J. [2 ]
Grivickas, P. [2 ]
Galeckas, A. [1 ,2 ]
机构：
[1] Institute of Material Research and Applied Sciences, Vilnius University, Sauletekio 10, 2054 Vilnius, Lithuania
[2] Department of Electronics, Royal Institute of Technology, Electrum 229, S-164 40, Kista-Stockholm, Sweden
来源：
Materials Science and Engineering B: Solid-State Materials for Advanced Technology | 1999年 / 61卷
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页码：197 / 201
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