Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers

被引：0
|
作者：
Grivickas, V. [1 ]
Linnros, J. [2 ]
Grivickas, P. [2 ]
Galeckas, A. [1 ,2 ]
机构：
[1] Institute of Material Research and Applied Sciences, Vilnius University, Sauletekio 10, 2054 Vilnius, Lithuania
[2] Department of Electronics, Royal Institute of Technology, Electrum 229, S-164 40, Kista-Stockholm, Sweden
来源：
Materials Science and Engineering B: Solid-State Materials for Advanced Technology | 1999年 / 61卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：197 / 201
相关论文
共 50 条
  • [1] Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers
    Grivickas, V
    Linnros, J
    Grivickas, P
    Galeckas, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 197 - 201
  • [2] Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
    Ichikawa, Shuhei
    Kawahara, Koutarou
    Suda, Jun
    Kimoto, Tsunenobu
    APPLIED PHYSICS EXPRESS, 2012, 5 (10)
  • [3] Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
    Klein, P. B.
    Myers-Ward, R.
    Lew, K. -K.
    VanMil, B. L.
    Eddy, C. R., Jr.
    Gaskill, D. K.
    Shrivastava, A.
    Sudarshan, T. S.
    SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 203 - +
  • [4] Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H-SiC epilayers
    Kimoto, Tsunenobu
    Hiyoshi, Toru
    Hayashi, Toshihiko
    Suda, Jun
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (08)
  • [5] Depth- and time-resolved free carrier absorption in 4H SiC epilayers: A study of carrier recombination and transport parameters
    Grivickas, V
    Linnros, J
    Galeckas, A
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 529 - 532
  • [6] Fundamental band edge absorption in nominally undoped and doped 4H-SiC
    Grivickas, P.
    Grivickas, V.
    Linnros, J.
    Galeckas, A.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)
  • [7] Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
    Lilja, Louise
    ul Hassan, Jawad
    Booker, Ian
    Bergman, Peder
    Janzen, Erik
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 637 - 640
  • [8] Deep traps and charge carrier lifetimes in 4H-SiC epilayers
    Huh, S. W.
    Sumakeris, J. J.
    Polyakov, A. Y.
    Skowronski, M.
    Klein, P. B.
    Shanabrook, B. V.
    O'Loughlin, M. J.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 493 - 496
  • [9] Carrier lifetime measurement in n- 4H-SiC epilayers
    Klein, P. B.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (03)
  • [10] The influence of growth conditions on carrier lifetime in 4H-SiC epilayers
    Lilja, Louise
    Booker, Iand D.
    ul Hassan, Jawad
    Janzen, Erik
    Bergman, J. Peder
    JOURNAL OF CRYSTAL GROWTH, 2013, 381 : 43 - 50
12345