共 50 条
- [1] Influence of metal impurities on lifetime RECOMBINATION LIFETIME MEASUREMENTS IN SILICON, 1998, 1340 : 294 - 304
- [2] INFLUENCE OF IMPURITIES ON LIFETIME OF EXCESS CHARGE CARRIERS IN GERMANIUM SOVIET PHYSICS-TECHNICAL PHYSICS, 1956, 1 (07): : 1360 - 1364
- [4] On the impact of metal impurities on the carrier lifetime in n-type germanium SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES II, 2007, 994 : 263 - +
- [5] Identification and quantification of trace metal impurities in silicon using the ELYMAT lifetime measurement PROCEEDINGS OF THE ELECTROCHEMICAL SOCIETY SYMPOSIUM ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS AND DEVICES, 1997, 97 (12): : 267 - 279
- [6] EFFECT OF TRANSITION METAL IMPURITIES IN LIFETIME OF MINORITY CARRIERS IN N-SI RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1966, 11 (06): : 1012 - +
- [8] INFLUENCE OF METAL IMPURITIES ON THE SURFACE POTENTIAL OF SILICON. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1977, 11 (06): : 654 - 656
- [9] ON THE INFLUENCE OF METAL IMPURITIES ON THE THERMAL CONTRACTION OF A NITROGEN ARC PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY, 2006, (06): : 222 - 224
- [10] Influence of vacuum chamber impurities on the lifetime of organic light-emitting diodes Scientific Reports, 6