Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction

被引：0

作者：

Chichibu, S.F. ^{[1
]}

Setoguchi, A. ^{[1
,7
]}

Azuhata, T. ^{[2
]}

Müllhäuser, J. ^{[3
]}

Sugiyama, M. ^{[1
,7
]}

Mizutani, T. ^{[1
,7
]}

Deguchi, T. ^{[4
]}

Nakanishi, H. ^{[5
]}

Sota, T. ^{[4
]}

Brandt, O. ^{[3
]}

Ploog, K.H. ^{[3
]}

Mukai, T. ^{[6
]}

Nakamura, S. ^{[6
,8
]}

机构：

[1] Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

[2] Dept. of Mat. Science and Technology, Hirosaki University, 3 Bunkyo-cho, Aomori 036-8561, Japan

[3] Paul-Drude-Inst. F., Hausvogteiplatz 5-7, D-10117 Berlin, Germany

[4] Dept. Elec., Electronics, Comp. Eng., Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan

[5] Department of Electrical Engineering, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan

[6] Dept. of Research and Development, Nichia Chemical Industries Ltd., 491 Oka, Kaminaku, Anan, Tokushima 774-8601, Japan

[7] Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan

[8] Department of Materials Engineering, University of California, Santa Barbara, CA 93106, United States

来源：

Physica Status Solidi (A) Applied Research | 2000年 / 180卷 / 01期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Absorption spectroscopy - Dislocations (crystals) - Electroluminescence - Excitons - Fermi level - Light emission - Light emitting diodes - Piezoelectricity - Semiconducting indium compounds

引用

页码：321 / 325

共 50 条

[21] Spatially separated excitons in quantum-dot quantum well structures
Chang, K
Xia, JB
PHYSICAL REVIEW B, 1998, 57 (16): : 9780 - 9786
[22] Spatially separated excitons in quantum-dot quantum well structures
Chang, K.
Xia, J.-B.
Physical Review B: Condensed Matter, 1998, 57 (16):
[23] Quantum well excitons in a high magnetic field
Monozon, BS
Pye, MJ
Bates, CA
Dunn, JL
SUPERLATTICES AND MICROSTRUCTURES, 1997, 21 (02) : 151 - 163
[24] High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380 nm
Graham, D. M.
Dawson, P.
Chabrol, G. R.
Hylton, N. P.
Zhu, D.
Kappers, M. J.
McAleese, C.
Humphreys, C. J.
JOURNAL OF APPLIED PHYSICS, 2007, 101 (03)
[25] Localized exciton dynamics in InGaN quantum well structures
Chichibu, SF
Azuhata, T
Okumura, H
Tackeuchi, A
Sota, T
Mukai, T
APPLIED SURFACE SCIENCE, 2002, 190 (1-4) : 330 - 338
[26] The electronic structures of In-Rich InGaN quantum well
Moon, Pilkyung
Kim, Hee Jin
Kwon, Soon-Yong
Yoon, Euijoon
Park, Seoung-Hwan
Leburton, Jean-Pierre
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 391 - +
[27] On indium segregation in InGaN/GaN quantum well structures
Yang, CC
Feng, SW
Lin, YS
Cheng, YC
Liao, CC
Tsai, CY
Ma, KJ
Chyi, JI
ULTRAFAST PHENOMENA IN SEMICONDUCTORS V, 2001, 4280 : 20 - 26
[28] Indium segregation in InGaN quantum-well structures
Duxbury, N
Bangert, U
Dawson, P
Thrush, EJ
Van der Stricht, W
Jacobs, K
Moerman, I
APPLIED PHYSICS LETTERS, 2000, 76 (12) : 1600 - 1602
[29] Binding energies of excitons in ionic quantum well structures
Antonelli, A.
Cen, J.
Bajaj, K. K.
Nuovo Cimento Della Societa Italiana Di Fisica. D, Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics, 17 (11-12):
[30] Optical evaluation of pretreated InGaN quantum well structures
Böttcher, T
Bertram, F
Bergman, P
Ueta, A
Christen, J
Hommel, D
GAN AND RELATED ALLOYS - 2003, 2003, 798 : 643 - 648

← 1 2 3 4 5 →