Measurement of a cross-section for single-event gate rupture in power MOSFET's

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作者：
Univ of Arizona, Tucson, United States [1 ]
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来源：
IEEE Electron Device Lett | / 4卷 / 163-165期
基金：
美国国家航空航天局;
关键词：
Electric breakdown - Electric currents - Electric power supplies to apparatus - Equipment testing - Gates (transistor) - Ions - Oxides - Power electronics;
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摘要：
The heavy-ion fluence required to induce Single-Event Gate Rupture (SEGR) in power MOSFET's is measured as a function of the drain bias, VDS, and as a function of the gate bias, VGS. These experiments reveal the abrupt nature of the SEGR-voltage threshold. In addition, the concepts of cross-section, threshold, and saturation in the SEGR phenomenon are introduced. This experimental technique provides a convenient method to quantify heavy-ion effects in power MOSFET's.
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