共 50 条
- [42] One-Dimensional Analysis of Transient Processes in Bipolar Transistors. Izvestiya Vysshikh Uchebnykh Zavedenij. Radioelektronika, 1980, 23 (06): : 55 - 60
- [43] USE OF AMORPHOUS AND MICROCRYSTALLINE SILICON FOR SILICON HETEROJUNCTION BIPOLAR TRANSISTORS. Applied Physics A: Solids and Surfaces, 1986, A41 (04): : 291 - 295
- [44] Short and long-term safe operating area considerations in ldmos transistors 2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL, 2005, : 545 - 550
- [46] CHARACTERIZATION OF NON-OHMIC BEHAVIOR OF EMITTER CONTACTS OF BIPOLAR TRANSISTORS. Electron device letters, 1984, EDL-5 (07): : 221 - 223
- [48] Impact of the Emitter Stored Charge on RF Noise of Junction Bipolar Transistors. 2012 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2012,
- [49] 20-GHZ FREQUENCY DIVIDER IMPLEMENTED WITH HETEROJUNCTION BIPOLAR TRANSISTORS. Electron device letters, 1987, EDL-8 (09): : 383 - 385