Low pressure plasma immersion ion implantation of silicon

被引：0
|
作者：
City Univ of Hong Kong, Kowloon, Hong Kong [1 ]
机构：
来源：
IEEE Trans Plasma Sci | / 6卷 / 1661-1668期
关键词：
Number:; 7000730; Acronym:; -; Sponsor:; Number: 9040220,9040332, Acronym: RGC, UGC, Sponsor: Research Grants Council, University Grants Committee,;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Electrical characterization of silicon nitride produced by plasma immersion ion implantation
    Chen, SM
    Shannon, JM
    Gwilliam, RM
    Sealy, BJ
    SURFACE & COATINGS TECHNOLOGY, 1997, 93 (2-3): : 269 - 273
  • [22] Growth of the carbide, nitride and oxide of silicon by plasma immersion ion implantation
    Volz, K
    Ensinger, W
    SURFACE & COATINGS TECHNOLOGY, 2002, 156 (1-3): : 237 - 243
  • [23] Simulation of AsH3 Plasma Immersion Ion Implantation into Silicon
    Burenkov, Alex
    Lorenz, Juergen
    Spiegel, Yohann
    Torregrosa, Frank
    2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014), 2014,
  • [24] The applications of plasma immersion ion implantation to crystalline silicon solar cells
    Liu, Bangwu
    PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2013), 2013, 38 : 289 - 296
  • [25] Study of magnetic field enhanced plasma immersion ion implantation in Silicon
    Pillaca, E. J. D. M.
    Kostov, K. G.
    Ueda, M.
    15TH INTERNATIONAL CONGRESS ON PLASMA PHYSICS (ICPP2010) & 13TH LATIN AMERICAN WORKSHOP ON PLASMA PHYSICS (LAWPP2010), 2014, 511
  • [26] Ellipsometric study of crystalline silicon hydrogenated by plasma immersion ion implantation
    Szekeres, A.
    Alexandrova, S.
    Petrik, P.
    Fodor, B.
    Bakalova, S.
    APPLIED SURFACE SCIENCE, 2013, 281 : 105 - 108
  • [27] Amorphous silicon carbonitride films modified by plasma immersion ion implantation
    Batocki, R. G. S.
    Mota, R. P.
    Honda, R. Y.
    Santos, D. C. R.
    VACUUM, 2014, 107 : 174 - 177
  • [28] Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation
    Appl Phys Lett, 19 (2767):
  • [29] Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation
    Lu, X
    Iyer, SSK
    Hu, CM
    Cheung, NW
    Min, J
    Fan, Z
    Chu, PK
    APPLIED PHYSICS LETTERS, 1997, 71 (19) : 2767 - 2769
  • [30] Plasma immersion ion implantation of UHMWPE
    Dong, H
    Bell, T
    Blawert, C
    Mordike, BL
    JOURNAL OF MATERIALS SCIENCE LETTERS, 2000, 19 (13) : 1147 - 1149
12345