Characterization of defects in Li-diffused n-type GaAs

被引：0
|
作者：
Yang, B.H. [1 ]
Egilsson, T. [1 ]
Kristjansson, S. [1 ]
Petursson, J. [1 ]
Gislason, H.P. [1 ]
机构：
[1] Univ of Iceland, Reykjavik, Iceland
来源：
Materials Science Forum | 1994年 / 143-4卷 / pt 2期
关键词：
Semiconducting gallium arsenide;
D O I：
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学科分类号：
摘要：
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页码：839 / 844
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